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Transistor BJT Characteristics Apparatus

Model No: AGN-EI-312
Complete apparatus with regulated power supply for studying the characteristics of Bipolar Junction Transistors (BJT) in both common emitter (CE) and common base (CB) configurations. Ideal for measuring input/output characteristics, current gain, and voltage gain.

Model No.

Types

AGN-EI-312

Transistor / BJT Characteristics Apparatus with Regulated Power Supply

AGN-EI-312A

Transistor / BJT Characteristics Apparatus (CE PNP)

AGN-EI-312B

Transistor / BJT Characteristics Apparatus (CE NPN)

AGN-EI-312C

Transistor / BJT Characteristics Apparatus (CB PNP)

AGN-EI-312D

Transistor / BJT Characteristics Apparatus (CB NPN)
Overall

4.0

(03 Reviews)
5 Star
90%
4 Star
60%
3 Star
40%
2 Star
20%
1 Star
10%
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Saina Paul

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Nicole Lana

Donec viverra sodales arcu gravida nibh at. Neque lobortis quis porta integer et placerat lectus scelerisque. Velit eget malesuada morbi faucibus at sed euismod. Tortor, eu ut id tincidunt leo placerat luctus

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Abela Lust

Donec viverra sodales arcu gravida nibh at. Neque lobortis quis porta integer et placerat lectus scelerisque. Velit eget malesuada morbi faucibus at sed euismod. Tortor, eu ut id tincidunt leo placerat luctus

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